MOSFET 10a 30V 0.013 Ohm 1Ch HS Logic Gate
HUF76131SK8: MOSFET 10a 30V 0.013 Ohm 1Ch HS Logic Gate
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 0.013 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOP-8 | Packaging : | Tube |
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . VDSS | 30 | V |
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . .VDGR | 30 | V |
Gate to Source Voltage . . . . . . . . . . . . VGS | ±16 | V |
Drain Current | ||
Continuous (Figure 2) (Notes 2, 3). . . . . . . . . . .ID | 10 | A |
Pulsed Drain Current . . . . . . .. . . . . IDM | Figure 5 | |
Pulsed Avalanche Rating. . . . . . . . . . EAS | Figure 6 | |
Power Dissipation . . . . . . . . . . . . . . . . . PD |
2.5 | W |
Derate Above 25 . . . . . . . . . . . . . . . . . . | 0.02 | W/ |
Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG | -55 to 150 | |
Maximum Temperature for Soldering | ||
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL | 300 | |
Package Body for 10s, See Techbrief 334. . . . . . . .Tpkg | 260 |