HUF76121SK8

Features: • Logic Level Gate Drive• 8A, 30V• Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com• Peak Current vs Pulse Width Curve• UIS Rating Curve• Tra...

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HUF76121SK8 Picture
SeekIC No. : 004367361 Detail

HUF76121SK8: Features: • Logic Level Gate Drive• 8A, 30V• Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance M...

floor Price/Ceiling Price

Part Number:
HUF76121SK8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

• Logic Level Gate Drive
• 8A, 30V
• Simulation Models
          - Temperature Compensated PSPICE™ and SABER© Electrical Models
          - Spice and SABER© Thermal Impedance Models
          - www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Transient Thermal Impedance Curve vs Board Mounting Area
• Related Literature
          - TB370, "Guidelines for Soldering Surface Mount Components to PC Boards"



Specifications

Drain to Source Voltage (Note 1). . . . . . . . . . . . . VDSS 30 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . .VDGR 30 V
Gate to Source Voltage . . . . . . . . . . . . VGS ±16 V
Drain Current    
Continuous (TA= 25, VGS = 10V) (Figure 2) (Note 2) . . . . ID
8 A
Continuous (TA= 100, VGS = 5V) (Note 3) . . . . . . . . . . ID 2.5 A
Continuous (TA= 100, VGS = 4.5V) (Note 3) . . . . . . . . ID 2.3 A
Pulsed Drain Current . . . . . . .. . . . . IDM Figure 4  
Pulsed Avalanche Rating. . . . . . . . . . EAS Figures 6, 17, 18  
Power Dissipation(Note 2) . . . . . . . . . . . . . . . . . PD
2.5 W
Derate Above 25 . . . . . . . . . . . . . . . . . . 20 W/
Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG -55 to 150
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL 300
Package Body for 10s, See Techbrief 334. . . . . . . .Tpkg 260



Description

This N-Channel power MOSFET HUF76121SK8 is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUF76121SK8  was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products.

Formerly developmental type TA76121.


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