Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Drain-Source Breakdown Voltage
: 30 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Continuous Drain Current
: 6.5 A
Resistance Drain-Source RDS (on)
: 0.03 Ohms
Configuration
: Single Quad Drain Dual Source
Package / Case
: SOP-8
Features: • Logic Level Gate Drive
• 6.5A, 30V
• Ultra Low On-Resistance, rDS(ON) = 0.030Ω
• Temperature Compensating PSPICE™ Model
• Temperature Compensating SABER Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"Specifications
| Drain to Source Voltage (Note 1). . . . . . . . . . . . . VDSS |
30 |
V |
| Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . .VDGR |
30 |
V |
| Gate to Source Voltage . . . . . . . . . . . . VGS |
±16 |
V |
| Drain Current |
|
|
Continuous (TA= 25, VGS = 10V) (Figure 2)(Note 2). . . . ID
|
6.5 |
A |
| Continuous (TA= 100, VGS = 5V) (Note 3) . . . . . . . . . . ID |
2.0 |
A |
| Continuous (TA= 100, VGS = 4.5V)(Note 3) . . .. . . . . . ID |
2.0 |
A |
| Pulsed Drain Current . . . . . . .. . . . . IDM |
Figure 4 |
|
| Pulsed Avalanche Rating. . . . . . . . . . EAS |
Figures 6 |
|
Power Dissipation(Note 2) . . . . . . . . .. . . . PD
|
2.5 |
W |
| Derate Above 25 . . . . . . . . . . . . . . . . . . |
20 |
W/ |
| Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG |
-55 to 150 |
|
| Maximum Temperature for Soldering |
|
|
| Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . TL |
300 |
|
| Package Body for 10s, See Techbrief 334. . . . . . . .Tpkg |
260 |
|
DescriptionThis N-Channel power MOSFET HUF76113SK8 is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUF76113SK8 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products.
Formerly developmental type TA76113.
HUF76113SK8 Data Sheet
