HUF76013P3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.018 Ohms


Features:

• 20A, 20V
         - rDS(ON) = 0.022Ω, VGS = 10V
         - rDS(ON) = 0.030Ω, VGS = 5V
• PWM Optimized for Synchronous Buck Applications
• Fast Switching
• Low Gate Charge
         - Qg Total 14nC (Typ)
• Low Capacitance
         - CISS 624pF (Typ)
         - CRSS 71pF (Typ)


Specifications

SYMBOL	PARAMETER	HUF76112SK8	UNITS
VDSS	Drain to Source Voltage (Note 1)	20	V
VDGR	Drain to Gate Voltage (RGS = 20kΩ) (Note 1)	20	V
VGS	Gate to Source Voltage	±16	V
ID ID IDM	Drain Current Continuous (TA = 25, VGS = 10V) (Figure 2) (Note 2) Continuous (TA = 100, VGS = 5V) (Note 2) Pulsed Drain Current	20 20 Figure 4	A A A
PD	Power Dissipation (Note 2) Derate Above 25oC	50 0.4	W W/
TJ, TSTG	Operating and Storage Temperature	-55 to 150
TL Tpkg	Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334	300 260
THERMAL SPECIFICATIONS
RJA	Thermal Resistance Junction to Case, TO-220, TO-252	2.5	/W
	Thermal Resistance Junction to Case, TO-220, TO-252	62	/W
	Thermal Resistance Junction to Case, TO-220, TO-252	100	/W

 

Description

The HUF76013P3 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses thereby increasing the overall system efficiency.


Parameters:

Technical/Catalog Information	HUF76013P3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	22 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	624pF @ 20V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	17nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUF76013P3 HUF76013P3