HUF76009P3

Features: • 20A, 20V - rDS(ON) = 0.027Ω, VGS = 10V - rDS(ON) = 0.039Ω, VGS = 5V• PWM optimized for synchronous buck applications• Fast Switching• Low Gate Charge - Qg Total 11nC (Typ)• Low Capacitance - CISS 470pF (Typ) - CRSS 50pF (Typ)Specifications ...

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SeekIC No. : 004367357 Detail

HUF76009P3: Features: • 20A, 20V - rDS(ON) = 0.027Ω, VGS = 10V - rDS(ON) = 0.039Ω, VGS = 5V• PWM optimized for synchronous buck applications• Fast Switching• Low Gate Charge ...

floor Price/Ceiling Price

Part Number:
HUF76009P3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

• 20A, 20V
         - rDS(ON) = 0.027Ω, VGS = 10V
         - rDS(ON) = 0.039Ω, VGS = 5V
• PWM optimized for synchronous buck applications
• Fast Switching
• Low Gate Charge
         - Qg Total 11nC (Typ)
• Low Capacitance
         - CISS 470pF (Typ)
         - CRSS 50pF (Typ)



Specifications

SYMBOL PARAMETER HUF76112SK8 UNITS
VDSS Drain to Source Voltage (Note 1) 20 V
VDGR Drain to Gate Voltage (RGS = 20kΩ) (Note 1) 20 V
VGS Gate to Source Voltage ±16 V
ID
ID
IDM
Drain Current
Continuous (TA = 25, VGS = 10V) (Figure 2)
Continuous (TA = 100, VGS = 5V)
Pulsed Drain Current
20
160
Figure 4
A
A
A
PD Power Dissipation
Derate Above 25
41
0.33
W
W/
TJ, TSTG Operating and Storage Temperature -55 to 150
TL
Tpkg
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260

THERMAL SPECIFICATIONS
RJA Thermal Resistance Junction to Case, TO-220, TO-252 3.04 /W
Thermal Resistance Junction to Case, TO-220, TO-252 62 /W
Thermal Resistance Junction to Case, TO-220, TO-252 100 /W

 




Description

THE HUF76009P3 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses thereby increasing the overall system efficiency.


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