MOSFET TO-263
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 38 A | ||
Resistance Drain-Source RDS (on) : | 0.071 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263AB | Packaging : | Reel |
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . VDSS | 200 | V |
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . VDGR | 200 | V |
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS | ±20 | V |
Drain Current | ||
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . .. . . . . ID | 38 | A |
Continuous (TC = 100, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID | 27 | A |
Pulsed Drain Current . . . . . . . . . . . . . . . . . IDM | Figure 4 | |
Pulsed Avalanche Rating . . . . . . . . . . . . . . . UIS | Figures 6, 14, 15 | |
Power Dissipation . . . . . . .. . . . . . PD |
310 | W |
Derate Above . . . . . . . . . . . . .25 | 2.07 | W/ |
Operating and Storage Temperature . . . . . TJ, TSTG | -55 to 175 | |
Maximum Temperature for Soldering | ||
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . TL | 300 | |
Package Body for 10s, See Techbrief TB334. . . . . . . . Tpkg | 260 |