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HUF75852G3

MOSFET 75a 150V 0.016 Ohm N-Ch MOSFET

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SeekIC No. : 00152552 Detail

HUF75852G3: MOSFET 75a 150V 0.016 Ohm N-Ch MOSFET

HUF75852G3 Data Sheet

floor Price/Ceiling Price

US $ 2.21~3.03 / Piece | Get Latest Price
Part Number:
HUF75852G3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~163
  • 163~250
  • 250~500
  • 500~1000
  • Unit Price
  • $3.03
  • $2.79
  • $2.54
  • $2.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.016 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Package / Case : TO-247
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.016 Ohms


Features:

• Ultra Low On-Resistance
         - rDS(ON) = 0.016Ω, VGS = 10V
• Simulation Models
         - Temperature Compensated PSPICE™ and SABER© Electrical Models
         - Spice and SABER© Thermal Impedance Models
         - www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . VDSS 150 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . VDGR 150 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS ±20 V
Drain Current    
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . .. . . . . ID 75 A
Continuous (TC = 100, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID 75 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . IDM Figure 4  
Pulsed Avalanche Rating . . . . . . . . . . . . . . . UIS Figures 6, 14, 15  
Power Dissipation . . . . . . .. . . . . . PD
 500 W
Derate Above . . . . . . . . . . . . .25 3.33 W/
Operating and Storage Temperature . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . TL 300
Package Body for 10s, See Techbrief TB334. . . . . . . . Tpkg 260



Parameters:

Technical/Catalog InformationHUF75852G3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs16 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 7690pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs480nC @ 20V
Package / CaseTO-247
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF75852G3
HUF75852G3



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