MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch
HUF75842P3: MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 43 A | ||
Resistance Drain-Source RDS (on) : | 0.042 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . VDSS | 150 | V |
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . VDGR | 150 | V |
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS | ±20 | V |
Drain Current | ||
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . .. . . . . ID | 43 | A |
Continuous (TC = 100, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID | 30 | A |
Pulsed Drain Current . . . . . . . . . . . . . . . . . IDM | Figure 4 | |
Pulsed Avalanche Rating . . . . . . . . . . . . . . . UIS | Figures 6, 14, 15 | |
Power Dissipation . . . . . . .. . . . . . PD |
230 | W |
Derate Above . . . . . . . . . . . . .25 | 1.53 | W/ |
Operating and Storage Temperature . . . . . TJ, TSTG | -55 to 175 | |
Maximum Temperature for Soldering | ||
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . TL | 300 | |
Package Body for 10s, See Techbrief TB334. . . . . . . . Tpkg | 260 |
Technical/Catalog Information | HUF75842P3 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 43A |
Rds On (Max) @ Id, Vgs | 42 mOhm @ 43A, 10V |
Input Capacitance (Ciss) @ Vds | 2730pF @ 25V |
Power - Max | 230W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 175nC @ 20V |
Package / Case | TO-220AB |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HUF75842P3 HUF75842P3 |