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HUF75829D3ST

MOSFET 18a 150V N-Ch 0.110 Ohm UltraFET

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SeekIC No. : 00162365 Detail

HUF75829D3ST: MOSFET 18a 150V N-Ch 0.110 Ohm UltraFET

HUF75829D3ST Data Sheet

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Part Number:
HUF75829D3ST
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.11 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 18 A
Drain-Source Breakdown Voltage : 150 V
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 0.11 Ohms


Parameters:

Technical/Catalog InformationHUF75829D3ST
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs110 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 1080pF @ 25V
Power - Max110W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs70nC @ 20V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF75829D3ST
HUF75829D3ST



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