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HUF75652G3

MOSFET 75a 100VN-Ch MOSFET

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SeekIC No. : 00146713 Detail

HUF75652G3: MOSFET 75a 100VN-Ch MOSFET

HUF75652G3 Data Sheet

floor Price/Ceiling Price

US $ 2.63~3.56 / Piece | Get Latest Price
Part Number:
HUF75652G3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $3.56
  • $3.2
  • $2.92
  • $2.63
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.008 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-247
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.008 Ohms


Features:

• Ultra Low On-Resistance
- rDS(ON) = 0.008, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™ Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

 
HUF75652G3
UNITS
Drain to Source Voltage (Note 1)
VDSS
100
V
Drain to Gate Voltage (RGS = 20k) (Note 1)
VDGR
100
V
Gate to Source Voltage
VGS
±20
V
rain Current Continuous(TC= 25, VGS = 10V) (Figure 2).
ID
75
A
rain Current Continuous(TC= 100, VGS = 10V) (Figure 2).
ID
75
A
Drain Current Pulsed Drain Current
IDM
Figure 4
Pulsed Avalanche Rating
EAS
Figures 6
Power Dissipation
PD
545
W
Derate Above 25
3.44
W/
Operating and Storage Temperature
TJ,TSTG
-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s.
TL
300
Package Body for 10s, See Techbrief 334
Tpkg
260
NOTES:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


Parameters:

Technical/Catalog InformationHUF75652G3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs8 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 7585pF @ 25V
Power - Max515W
PackagingTube
Gate Charge (Qg) @ Vgs475nC @ 20V
Package / CaseTO-247
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF75652G3
HUF75652G3



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