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HUF75645S3S

MOSFET 75a 100V N-Ch UltraFET

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SeekIC No. : 00159685 Detail

HUF75645S3S: MOSFET 75a 100V N-Ch UltraFET

HUF75645S3S Data Sheet

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Part Number:
HUF75645S3S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.014 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.014 Ohms
Continuous Drain Current : 75 A
Package / Case : TO-263AB


Features:

• Ultra Low On-Resistance
- rDS(ON) = 0.014, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™ Electrical Models
- Spice and Saber Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

 
HUF75652G3
UNITS
Drain to Source Voltage (Note 1)
VDSS
100
V
Drain to Gate Voltage (RGS = 20k) (Note 1)
VDGR
100
V
Gate to Source Voltage
VGS
±20
V
rain Current Continuous(TC= 25, VGS = 10V) (Figure 2).
ID
75
A
rain Current Continuous(TC= 100, VGS = 10V) (Figure 2).
ID
65
A
Drain Current Pulsed Drain Current
IDM
Figure 4
Pulsed Avalanche Rating
EAS
Figures 6,14,15
Power Dissipation
PD
310
W
Derate Above 25
2.07
W/
Operating and Storage Temperature
TJ,TSTG
-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s.
TL
300
Package Body for 10s, See Techbrief 334
Tpkg
260
NOTES:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absol24ute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


Parameters:

Technical/Catalog InformationHUF75645S3S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs14 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 3790pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs238nC @ 20V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF75645S3S
HUF75645S3S



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