HUF75637P3

MOSFET 44a 100V 0.030 Ohm N-Ch MOSFET

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HUF75637P3: MOSFET 44a 100V 0.030 Ohm N-Ch MOSFET

floor Price/Ceiling Price

Part Number:
HUF75637P3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/6

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 44 A
Resistance Drain-Source RDS (on) : 0.03 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 44 A
Resistance Drain-Source RDS (on) : 0.03 Ohms


Features:

• Ultra Low On-Resistance
- rDS(ON) = 0.030, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER© Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.semi.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve



Specifications

 
UNITS
Drain to Source Voltage (Note 1)
VDSS
100
V
Drain to Gate Voltage (RGS = 20kW) (Note 1)
VDGR
100
V
Gate to Source Voltage
VGS
±20
V
Drain Current Continuous(TC= 25, VGS = 10V) (Figure 2).
ID
44
A
Drain Current Continuous(TC=100, VGS = 10V) (Figure 2).
ID
31
A
Drain Current Pulsed Drain Current
IDM
Figure 4
Pulsed Avalanche Rating
EAS
Figures 6, 14, 15
Power Dissipation
PD
155
W
Derate Above 25oC
1.03
W/
Operating and Storage Temperature
TJ,TSTG
-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s.
TL
300
Package Body for 10s, See Techbrief 334
Tpkg
260

NOTE:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


Parameters:

Technical/Catalog InformationHUF75637P3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C44A
Rds On (Max) @ Id, Vgs30 mOhm @ 44A, 10V
Input Capacitance (Ciss) @ Vds 1700pF @ 25V
Power - Max155W
PackagingTube
Gate Charge (Qg) @ Vgs108nC @ 20V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF75637P3
HUF75637P3



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