HUF75631SK8

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 5.5 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.039 Ohms


Features:

• Ultra Low On-Resistance
- r_DS(ON) = 0.039, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE^® and SABER^© Electrical Models
- Spice and SABER^© Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

				UNITS
Drain to Source Voltage (Note 1)		VDSS	100	V
Drain to Gate Voltage (RGS = 20kW) (Note 1)		VDGR	100	V
Gate to Source Voltage		VGS	±20	V
Drain Current Continuous(TC= 25, VGS = 10V) (Figure 2).		ID	5.5	A
Drain Current Continuous(TC= 100, VGS = 10V) (Figure 2).		ID	3.5	A
Drain Current Pulsed Drain Current		IDM	Figure 4
Pulsed Avalanche Rating		EAS	Figures 6, 14, 15
Power Dissipation		PD	2.5	W
Derate Above 25oC			20	W/
Operating and Storage Temperature		TJ,TSTG	-55 to 175
Maximum Temperature for Soldering	Leads at 0.063in (1.6mm) from Case for 10s.	TL	300
	Package Body for 10s, See Techbrief 334	Tpkg	260

NOTE:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.