MOSFET 100V NCh PowerMOSFET UltraFET
HUF75631S3ST: MOSFET 100V NCh PowerMOSFET UltraFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 33 A | ||
Resistance Drain-Source RDS (on) : | 0.04 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263AB | Packaging : | Reel |
HUF75631P3 |
UNITS | |||
Drain to Source Voltage (Note 1) |
VDSS |
100 |
V | |
Drain to Gate Voltage (RGS = 20k) (Note 1) |
VDGR |
100 |
V | |
Gate to Source Voltage |
VGS |
±20 |
V | |
Drain Current Continuous (TC= 25, VGS = 10V)(Figure 2). |
ID |
33 |
A | |
Drain Current Continuous (TC= 100, VGS = 10V)(Figure 2). |
ID |
23 |
A | |
Drain Current Pulsed Drain Current |
IDM |
Figure 4 |
||
Pulsed Avalanche Rating |
EAS |
Figures 6,14,15 |
||
Power Dissipation |
PD |
120 |
W | |
Derate Above 25 |
0.80 |
W/ | ||
Operating and Storage Temperature |
TJ,TSTG |
-55 to 175 |
||
Maximum Temperature for Soldering | Leads at 0.063in (1.6mm) from Case for 10s. |
TL |
300 |
|
Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |
Technical/Catalog Information | HUF75631S3ST |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 33A |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 33A, 10V |
Input Capacitance (Ciss) @ Vds | 1220pF @ 25V |
Power - Max | 120W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 79nC @ 20V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HUF75631S3ST HUF75631S3ST |