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HUF75542S3S

MOSFET

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SeekIC No. : 00166547 Detail

HUF75542S3S: MOSFET

HUF75542S3S Data Sheet

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Part Number:
HUF75542S3S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.014 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263AB    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 80 V
Resistance Drain-Source RDS (on) : 0.014 Ohms
Continuous Drain Current : 75 A
Package / Case : TO-263AB


Features:

• Ultra Low On-Resistance
- rDS(ON) = 0.014, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER© Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

 
UNITS
Drain to Source Voltage (Note 1)
VDSS
80
V
Drain to Gate Voltage (RGS = 20k) (Note 1)
VDGR
80
V
Gate to Source Voltage
VGS
±20
V
Drain Current Continuous (TC = 25, VGS = 10V) (Figure 2).
ID
75
A
Drain Current Continuous (TC = 100, VGS = 10V) (Figure 2).
ID
58
A
Drain Current Pulsed Drain Current
IDM
Figure 4
Pulsed Avalanche Rating
EAS
Figures 6, 14, 15
Power Dissipation
PD
230
W
Derate Above 25
1.54
W/
Operating and Storage Temperature
TJ,TSTG
-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s.
TL
300
Package Body for 10s, See Techbrief 334
Tpkg
260
NOTE:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


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