MOSFET 55V N-Channel
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 75 A | ||
Resistance Drain-Source RDS (on) : | 0.008 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-3PN | Packaging : | Tube |
Symbol | Parameter | Ratings | Units | |
VDSS VGSS |
Drain to Source Voltage Gate to Source Voltage |
55 ±20 |
V V | |
ID IDM |
Drain Current Drain Current |
-Continuous (TC = 130) - Pulsed |
75 300 |
A A |
EAS | Single Pulsed Avalanche Energy (Note 1) | 1153 | mJ | |
PD | Power Dissipation | (TC = 25) - Derate above 25 |
288.5 1.92 |
W W/ |
TJ, TSTG | Operating and Storage Temperature Range | -55 to +175 | ||
TL | Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds |
300 |
This N-channel power MOSFET HUF75344A3 is produced using Fairchild Semiconductor's innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored change. HUF75344A3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motro drives, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Technical/Catalog Information | HUF75344A3 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 75A |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 75A, 10V |
Input Capacitance (Ciss) @ Vds | 4855pF @ 25V |
Power - Max | 288.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 208nC @ 20V |
Package / Case | TO-3PN |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HUF75344A3 HUF75344A3 |