Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Drain-Source Breakdown Voltage
: 55 V
Package / Case
: TO-247
Continuous Drain Current
: 75 A
Resistance Drain-Source RDS (on)
: 0.0095 Ohms
Features: • 75A, 55V
• Simulation Models
- Temperature Compensating PSPICE® and SABER™ Models
- Thermal Impedance PSPICE™ and SABER Models Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"Specifications
| |
|
|
UNITS |
| Drain to Source Voltage (Note 1) |
VDSS |
55 |
V |
| Drain to Gate Voltage (RGS = 20k) (Note 1) |
VDGR |
55 |
V |
| Gate to Source Voltage |
VGS |
±20 |
V |
| Drain Current Continuous (Figure 2). |
ID |
75 |
A |
| Drain Current Pulsed Drain Current |
IDM |
Figure 4 |
|
| Pulsed Avalanche Rating |
EAS |
Figures 6, 14, 15 |
|
| Power Dissipation |
PD |
270 |
W |
| Derate Above 25 |
|
1.81 |
W/ |
| Operating and Storage Temperature |
TJ,TSTG |
-55 to 175 |
|
| Maximum Temperature for Soldering |
Leads at 0.063in (1.6mm) from Case for 10s. |
TL |
300 |
|
| Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |
|
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25 to 150.DescriptionThese N-Channel power MOSFETs HUF75343G3 are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUF75343G3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery operated products.
Parameters: | Technical/Catalog Information | HUF75343G3 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 75A, 10V |
| Input Capacitance (Ciss) @ Vds | 3000pF @ 25V |
| Power - Max | 270W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 205nC @ 20V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HUF75343G3
HUF75343G3
|
HUF75343G3 Data Sheet
