Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 55 V
Resistance Drain-Source RDS (on)
: 0.014 Ohms
Continuous Drain Current
: 75 A
Features: • 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER© Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at: www..Intersil.com/families/models.htm
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"Specifications
| |
|
|
UNITS |
| Drain to Source Voltage (Note 1) |
VDSS |
55 |
V |
| Drain to Gate Voltage (RGS = 20k) (Note 1) |
VDGR |
55 |
V |
| Gate to Source Voltage |
VGS |
±20 |
V |
| Drain Current Continuous (Figure 2). |
ID |
75 |
A |
| Drain Current Pulsed Drain Current |
IDM |
Figure 4 |
|
| Pulsed Avalanche Rating |
EAS |
Figures 6, 14, 15 |
|
| Power Dissipation |
PD |
175 |
W |
| Derate Above 25 |
|
1.17 |
W/ |
| Operating and Storage Temperature |
TJ,TSTG |
-55 to 175 |
|
| Maximum Temperature for Soldering |
Leads at 0.063in (1.6mm) from Case for 10s. |
TL |
300 |
|
| Package Body for 10s, See Techbrief 334 |
Tpkg |
260 |
|
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.DescriptionThese N-Channel power MOSFETs HUF75337P3 are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUF75337P3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Parameters: | Technical/Catalog Information | HUF75337P3 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 75A, 10V |
| Input Capacitance (Ciss) @ Vds | 1775pF @ 25V |
| Power - Max | 175W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 109nC @ 20V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HUF75337P3
HUF75337P3
|
HUF75337P3 Data Sheet
