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HUF75337G3

Features: • 75A, 55V• Simulation Models- Temperature Compensated PSPICE® and SABER© Models- SPICE and SABER Thermal Impedance Models Available on the WEB at: www..Intersil.com/families/models.htm• Peak Current vs Pulse Width Curve• UIS Rating Curve• Related L...

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SeekIC No. : 004367352 Detail

HUF75337G3: Features: • 75A, 55V• Simulation Models- Temperature Compensated PSPICE® and SABER© Models- SPICE and SABER Thermal Impedance Models Available on the WEB at: www..Intersil.com/f...

HUF75337G3 Data Sheet

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Part Number:
HUF75337G3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER© Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at: www..Intersil.com/families/models.htm
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

 
UNITS
Drain to Source Voltage (Note 1)
VDSS
55
V
Drain to Gate Voltage (RGS = 20k) (Note 1)
VDGR
55
V
Gate to Source Voltage
VGS
±20
V
Drain Current Continuous (Figure 2).
ID
75
A
Drain Current Pulsed Drain Current
IDM
Figure 4
Pulsed Avalanche Rating
EAS
Figures 6, 14, 15
Power Dissipation
PD
175
W
Derate Above 25
1.17
W/
Operating and Storage Temperature
TJ,TSTG
-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s.
TL
300
Package Body for 10s, See Techbrief 334
Tpkg
260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


Description

These N-Channel power MOSFETs HUF75337G3 are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUF75337G3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.




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