Position: Home  > All Categories> Integrated Circuits (ICs) > HUF75337G3

HUF75337G3

Features: • 75A, 55V• Simulation Models- Temperature Compensated PSPICE® and SABER© Models- SPICE and SABER Thermal Impedance Models Available on the WEB at: www..Intersil.com/families/models.htm• Peak Current vs Pulse Width Curve• UIS Rating Curve• Related L...

product image

HUF75337G3 Picture
See larger image
SeekIC No. : 004367352 Detail

HUF75337G3: Features: • 75A, 55V• Simulation Models- Temperature Compensated PSPICE® and SABER© Models- SPICE and SABER Thermal Impedance Models Available on the WEB at: www..Intersil.com/f...

HUF75337G3 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
HUF75337G3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 75A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER© Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at: www..Intersil.com/families/models.htm
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

 
UNITS
Drain to Source Voltage (Note 1)
VDSS
55
V
Drain to Gate Voltage (RGS = 20k) (Note 1)
VDGR
55
V
Gate to Source Voltage
VGS
±20
V
Drain Current Continuous (Figure 2).
ID
75
A
Drain Current Pulsed Drain Current
IDM
Figure 4
Pulsed Avalanche Rating
EAS
Figures 6, 14, 15
Power Dissipation
PD
175
W
Derate Above 25
1.17
W/
Operating and Storage Temperature
TJ,TSTG
-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s.
TL
300
Package Body for 10s, See Techbrief 334
Tpkg
260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


Description

These N-Channel power MOSFETs HUF75337G3 are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUF75337G3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Crystals and Oscillators
WT325BI0030.000000
2SB49
Integrated Circuits (ICs)
TA8435H
1MB12-140
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Undefined Category
VI-B63-IU
X27 589
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
View more