HUF75333G3

Features:

• 66A, 55V
• Simulation Models
- Temperature Compensated PSPICE^® and SABER^© Models
- SPICE and SABER Thermal Impedance Models Available on the WEB at: www.Intersil.com/families/models.htm
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

				UNITS
Drain to Source Voltage (Note 1)		VDSS	55	V
Drain to Gate Voltage (RGS = 20k) (Note 1)		VDGR	55	V
Gate to Source Voltage		VGS	±20	V
rain Current Continuous (Figure 2).		ID	66	A
Drain Current Pulsed Drain Current		IDM	Figure 4
Pulsed Avalanche Rating		EAS	Figures 6,14,15
Power Dissipation		PD	150	W
Derate Above 25			1	W/
Operating and Storage Temperature		TJ,TSTG	-55 to 175
Maximum Temperature for Soldering	Leads at 0.063in (1.6mm) from Case for 10s.	TL	300
	Package Body for 10s, See Techbrief 334	Tpkg	260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25 to 150.


Description

These N-Channel power MOSFETs HUF75333G3 are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUF75333G3 was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.