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HUF75329S3

MOSFET 20a 55V N-Channel UltraFET

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SeekIC No. : 00160474 Detail

HUF75329S3: MOSFET 20a 55V N-Channel UltraFET

HUF75329S3 Data Sheet

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Part Number:
HUF75329S3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 49 A
Resistance Drain-Source RDS (on) : 0.024 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 49 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-262
Resistance Drain-Source RDS (on) : 0.024 Ohms


Parameters:

Technical/Catalog InformationHUF75329S3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C49A
Rds On (Max) @ Id, Vgs24 mOhm @ 49A, 10V
Input Capacitance (Ciss) @ Vds 1060pF @ 25V
Power - Max128W
PackagingTube
Gate Charge (Qg) @ Vgs75nC @ 20V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF75329S3
HUF75329S3



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