HUF75329G3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 49 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.024 Ohms


Features:

• 49A, 55V
• Ultra Low On-Resistance, rDS(ON) = 0.024
• Temperature Compensating PSPICE^® and SABER^© Models
- Available on the web at: www.Intersil.com
• Thermal Impedance PSPICE and SABER Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

				UNITS
Drain to Source Voltage (Note 1)		VDSS	55	V
Drain to Gate Voltage (RGS = 20kW) (Note 1)		VDGR	55	V
Gate to Source Voltage		VGS	±20	V
Drain Current Continuous(TC= 25, VGS = 10V) (Figure 2).		ID	49	A
Drain Current Pulsed Drain Current		IDM	Figure 4
Pulsed Avalanche Rating		EAS	Figures 6, 14, 15
Power Dissipation		PD	128	W
Derate Above 25oC			0.86	W/
Operating and Storage Temperature		TJ,TSTG	-55 to 175
Maximum Temperature for Soldering	Leads at 0.063in (1.6mm) from Case for 10s.	TL	300
	Package Body for 10s, See Techbrief 334	Tpkg	260

NOTE:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


Description

These N-Channel power MOSFETs HUF75329G3 are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUF75329G3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Parameters:

Technical/Catalog Information	HUF75329G3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	49A
Rds On (Max) @ Id, Vgs	24 mOhm @ 49A, 10V
Input Capacitance (Ciss) @ Vds	1060pF @ 25V
Power - Max	128W
Packaging	Tube
Gate Charge (Qg) @ Vgs	75nC @ 20V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUF75329G3 HUF75329G3