DescriptionThe HT772-P belongs to the HT772 series. It is a NPN epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for use in output stage of 1 W audio amplifier,voltage regulator,DC-DC converter and relay driver. It is available in the TO-126 package. The foll...
HT772-P: DescriptionThe HT772-P belongs to the HT772 series. It is a NPN epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for use in output stage of 1 W audio amplifier,...
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The HT772-P belongs to the HT772 series. It is a NPN epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for use in output stage of 1 W audio amplifier,voltage regulator,DC-DC converter and relay driver. It is available in the TO-126 package.
The following is the description about HT772-P's absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 10 W when TC is 25 and is 1 W when TA is 25 ; (3): collector to base voltage(BVCBO) is -40 V and collector to emitter voltage(BVCEO) is -30 V,emitter to base voltage(VBEBO) is -5 V; (4): IC collector current(DC) is - 3 A and IC collector current(pulse) is -7 A; (5): IB base current(DC) is -0.6 A; (6): the minimum VBCBO is -40 V when IC -100 A; (7): the minimum BVCEO is -30 V when IC is -1 mA,and VBEBO is -5 V at IE is -10 A ; (8): the maximum ICBO is -1A when VCB is -30 V,the maximum IEBO is -1 A at VEB is -3 V; (9): the maximum VCE(sat) is -0.5 V,the typical is -0.3 V at the condition of IC is -2 A and IB is -0.2 mA; (10): the typical fT is 80 MHz at IC is -0.1 A,VCE is -5 V.
If you want to know more information about the HT772-P,please download the datasheet at www.seekic.com.