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HT666

Features: • High Frequency Current Gain• High Speed Switching TransistorSpecifications• Maximum TemperaturesStorage Temperature ............................-55 ~ +150 °CJunction Temperature ......................+150 °C Maximum• Maximum Power DissipationTotal Power Dissipat...

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SeekIC No. : 004366913 Detail

HT666: Features: • High Frequency Current Gain• High Speed Switching TransistorSpecifications• Maximum TemperaturesStorage Temperature ............................-55 ~ +150 °CJunction Te...

HT666 Data Sheet

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Part Number:
HT666
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• High Frequency Current Gain
• High Speed Switching Transistor


Specifications

• Maximum Temperatures
Storage Temperature ............................-55 ~ +150 °C
Junction Temperature ......................+150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ................  625 mW
• Maximum Voltages and Currents (TA=25°C)
BVCBO Collector to Base Voltage.............................75 V
BVCEO Collector to Emitter Voltage.........................40 V
BVEBO Emitter to Base Voltage................................ 6 V
IC Collector Current ...........................................600 mA


Description

The HT666 is designed for general purpose amplifier and high-speed,mediumpower switching applications.


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