Features: ` Operating voltage: 2.7V~5.5V` Low power consumption Operation: 25mA Max. (VCC=5V) 10mA Max. (VCC=3V) Standby: 30mA Max. (VCC=5V) 10mA Max. (VCC=3V)` Access time:150ns Max. (VCC=5V) 250ns Max. (VCC=3V)` 65536´8 bits of mask ROM` Mask options: chip enable CE/CE/OE1/OE1 and output e...
HT23C512: Features: ` Operating voltage: 2.7V~5.5V` Low power consumption Operation: 25mA Max. (VCC=5V) 10mA Max. (VCC=3V) Standby: 30mA Max. (VCC=5V) 10mA Max. (VCC=3V)` Access time:150ns Max. (VCC=5V) 250ns...
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The HT23C512 is a read-only memory with high performance CMOS storage device whose 512K of memory is arranged into 65536 words by 8 bits.
For application flexibility, the chip enable and output enable control pins can be selected as active high or active low. This flexibility not only allows easy interface with most microprocessors, but also eliminates bus contention in multiple bus microprocessor systems. An additional feature of the HT23C512 is its ability to enter the standby mode whenever the chip enable (CE/CE) is inactive, thus reducing current consumption to below 30mA. The combination of these functions makes the chip suitable for high density low power memory applications.