HT23C010

Features:

` Operating voltage: 2.7V~5.5V
` Low power consumption
Operation: 25mA Max. (V_CC=5V)
                     10mA Max. (V_CC=3V)
Standby: 30mA Max. (V_CC=5V)
                   10mA Max. (V_CC=3V)
` Access time:150ns Max. (V<sub>CC</sub>=5V) 
                       250ns Max. (V<sub>CC</sub>=3V)
` 131072´8 bits of mask ROM
` Mask options: chip enable CE/CE/OE1/ OE1B and output enable OE/OE/NC
` TTL compatible inputs and outputs
` Tristate outputs
` Fully static operation
` Package type: 28-pin DIP/SOP 
                          32-pin DIP/SOP/PLCC


Pinout




Specifications

Supply Voltage .................................0.3V to 6V
Input Voltage........................0.3V to VCC+0.3V
Storage Temperature................. 50 to 125
Operating Temperature............... 40 to 85

*Note: These are stress ratings only. Stresses exceeding the range specified under "Absolute Maximum Ratings" may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.




Description

The HT23C010 is a read-only memory with high performance CMOS storage device whose 1024K of memory is arranged into 131072 words by 8 bits.

For application flexibility, the chip enable and output enable control pins can be selected as active high or active low. This flexibility not only allows easy interface with most microprocessors, but also eliminates bus contention in multiple bus microprocessor systems. An additional feature of the HT23C010 is its ability to enter the standby mode whenever the chip enable (CE/CE) is inactive, thus reducing current consumption to below 30mA. The combination of these functions makes the chip suitable for high density low power memory applications.