HSMS-285x

Features:

·Surface Mount SOT-23/ SOT-143 Packages
·Miniature SOT-323 and SOT-363 Packages
·High Detection Sensitivity: up to 50 mV/W at 915 MHz
·Low Flicker Noise:
-162 dBV/Hz at 100 Hz
·Low FIT (Failure in Time) Rate*
·Tape and Reel Options Available
·Matched Diodes for Consistent Performance
·Better Thermal Conductivity for Higher Power Dissipation
·Lead-free Option Available


Application

·Agilent^,s HSMS-285x family of Schottky detector diodes has been developed specifically for low cost, high volume designs in small signal(P_in< -20dBm) applica- tions at frequencies below 1.5GHz. At higher frequencies, the DC biased HSMS-286x family should be considered.

·In large signal power or gain con- trol applications (P >-20dBm), in the HSMS-282x and HSMS-286x products should be used. The HSMS-285x zero bias diode is not designed for large signal designs.


Specifications

Symbol	Parameter	Unit	Absolute Maximum[1]
			SOT-23/143	SOT-323/363
PIV	Peak Inverse Voltage	V	2.0	2.0
TJ	Junction Temperature		150	150
TSTG	Storage Temperature		-65 to 150	-65 to 150
TOP	Operating Temperature		-65 to 150	-65 to 150
jc	Thermal Resistance[2]	/W	500	150

Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T_C = +25, where T _C is defined to be the temperature at the package pins where contact is made to the circuit board.


Description

Agilent^,s HSMS-285x family o zero bias Schottky detector diodes has been designed and optimized for use in small signal (P_in  <-20 dBm) applications at in frequencies below 1.5GHz. They are ideal for RF/ID and RF Tag applications where primary (DC bias) power is not available.

Important Note:  For detector applications with input power levels greater than (R)C20 dBm, us the HSMS-282x series at frequen- cies below 4.0 GHz, and the HSMS-286x series at frequencies above 4.0GHz. The HSMS-285x series IS NOT RECOMMENDED for these higher power level applications.

Available in various package configurations, these detector diodes HSMS-285x provide low cost solutions to a wide variety of design prob- lems. Agilent°Os manufacturin techniques assure that when two diodes are mounted into a single package, they are taken from adjacent sites on the wafer, assuring the highest possible degree of match.