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SeekIC No. : 003434991 Detail

HSG1002VE-TL-E: IC AMP HBT SIGE 38GHZ MFPAK-4

HSG1002VE-TL-E Data Sheet

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Part Number:: HSG1002VE-TL-E
Mfg:
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/7/15

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Product Details

Quick Details

Series:	-	Manufacturer:	Renesas Electronics America
Transistor Type:	NPN	Typical Resistor Ratio :	0.12
Voltage - Collector Emitter Breakdown (Max):	3.5V	Frequency - Transition:	38GHz
Noise Figure (dB Typ @ f):	0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz	Gain:	8dB ~ 19.5dB
Power - Max:	200mW	DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 5mA, 2V
Current - Collector (Ic) (Max):	35mA	Mounting Type:	Surface Mount
Package / Case:	4-SMD, Gull Wing	Supplier Device Package:	4-MFPAK

Description

Series: -
Transistor Type: NPN
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Power - Max: 200mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
Manufacturer: Renesas Electronics America
Frequency - Transition: 38GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain: 8dB ~ 19.5dB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: 4-MFPAK

Parameters:

Technical/Catalog Information	HSG1002VE-TL-E
Vendor	Renesas Technology America
Category	Discrete Semiconductor Products
Frequency - Transition	38GHz
Noise Figure (dB Typ @ f)	1.2dB ~ 1.8dB @ 5.8GHz
Current - Collector (Ic) (Max)	35mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 5mA, 2V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	3.5V
Gain	1.95dB
Power - Max	200mW
Compression Point (P1dB)	-
Package / Case	4-MFP
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HSG1002VE TL E HSG1002VETLE

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HSG1002VE-TL-E

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