Features: · Part Identification HSD4M64D4B-10 : 100MHz ( CL=2) HSD4M64D4B-10L : 100MHz ( CL=3) HSD4M64D4B- 8 : 125MHz ( CL=3) · Burst mode operation · Auto & self refresh capability (4096 Cycles/64ms) · LVTTL compatible inputs and outputs · Single 3.3V±0.3V power supply · MRS cycle with addres...
HSD4M64D4B: Features: · Part Identification HSD4M64D4B-10 : 100MHz ( CL=2) HSD4M64D4B-10L : 100MHz ( CL=3) HSD4M64D4B- 8 : 125MHz ( CL=3) · Burst mode operation · Auto & self refresh capability (4096 Cycles...
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PARAMETER |
SYMBOL |
RATING |
Voltage on Any Pin Relative to Vss |
VIN,OUT |
-1V to 4.6V |
Voltage on Vcc Supply Relative to Vss |
Vcc |
-1V to 4.6V |
Power Dissipation |
PD |
4W |
Storage Temperature |
TSTG |
-55 to150 |
Short Circuit Output Current |
IOS |
50mA |
Notes:
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
The HSD4M64D4B is a 4M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 1M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD4M64D4B is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.