HSD16M64F8V

Features: • Part IdentificationHSD16M64F8V :Stacking Height ( T = 11.3mm )HSD16M64F8VA :Stacking Height ( T = 7.3mm )• Burst mode operation• Auto & self refresh capability (4K Cycles/64ms)• LVTTL compatible inputs and outputs• Single 3.3V ±0.3V power supply•...

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SeekIC No. : 004365998 Detail

HSD16M64F8V: Features: • Part IdentificationHSD16M64F8V :Stacking Height ( T = 11.3mm )HSD16M64F8VA :Stacking Height ( T = 7.3mm )• Burst mode operation• Auto & self refresh capability (4K ...

floor Price/Ceiling Price

Part Number:
HSD16M64F8V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Part Identification
HSD16M64F8V :
Stacking Height ( T = 11.3mm )
HSD16M64F8VA :
Stacking Height ( T = 7.3mm )
• Burst mode operation
• Auto & self refresh capability (4K Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge
of the system clock
• 120pin-SMM type FR4-PCB design
• The used device is 16Mx8bit SRAM
• Pin assignment is compatible with
- HSD8M64F8V
- HSD32M64F8V





Specifications

PARAMETER SYMBOL RATING
Voltage on Any Pin Relative to Vss VIN,OUT -1V to 4.6V
Voltage on Vcc Supply Relative to Vss VCC -1V to 4.6V
Power Dissipation PD 8W
Storage Temperature TSTG -55°C to +150°C
Operating Temperature IOS 400mA

Notes :
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.






Description

The HSD16M64F8V/VA is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 4M x 8 bit with 4banks Synchronous DRAMs in TSOP-II packages is mounted on a 120-pin, double-sided, FR-4-printed circuit board., Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD16M64F8V/VA is a SMM (Stackable Memory Module) designed and is intended for mounting into two 60-pin connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.






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