Features: • Part IdentificationHSD16M64F8V :Stacking Height ( T = 11.3mm )HSD16M64F8VA :Stacking Height ( T = 7.3mm )• Burst mode operation• Auto & self refresh capability (4K Cycles/64ms)• LVTTL compatible inputs and outputs• Single 3.3V ±0.3V power supply•...
HSD16M64F8V: Features: • Part IdentificationHSD16M64F8V :Stacking Height ( T = 11.3mm )HSD16M64F8VA :Stacking Height ( T = 7.3mm )• Burst mode operation• Auto & self refresh capability (4K ...
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DescriptionThe HSD128M72B9K is a 128M x 72 bit Synchronous Dynamic RAM high density memory module....
PARAMETER | SYMBOL | RATING |
Voltage on Any Pin Relative to Vss | VIN,OUT | -1V to 4.6V |
Voltage on Vcc Supply Relative to Vss | VCC | -1V to 4.6V |
Power Dissipation | PD | 8W |
Storage Temperature | TSTG | -55°C to +150°C |
Operating Temperature | IOS | 400mA |
Notes :
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
The HSD16M64F8V/VA is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 4M x 8 bit with 4banks Synchronous DRAMs in TSOP-II packages is mounted on a 120-pin, double-sided, FR-4-printed circuit board., Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD16M64F8V/VA is a SMM (Stackable Memory Module) designed and is intended for mounting into two 60-pin connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.