Features: • Part IdentificationHSD16M64B8A-F/10L : 100MHz (CL=3)HSD16M64B8A-F/10 : 100MHz (CL=2)HSD16M64B8A-F/12 : 125MHz (CL=3)HSD16M64B8A-F/13 : 133MHz (CL=3)F means Auto & Self refresh with Low-Power (3.3V)• Burst mode operation• Auto & self refresh capability (4096 Cy...
HSD16M64B8A: Features: • Part IdentificationHSD16M64B8A-F/10L : 100MHz (CL=3)HSD16M64B8A-F/10 : 100MHz (CL=2)HSD16M64B8A-F/12 : 125MHz (CL=3)HSD16M64B8A-F/13 : 133MHz (CL=3)F means Auto & Self refresh ...
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Features: • Part IdentificationHSD16M64B8W-10 : 100MHz (CL=2)HSD16M64B8W-10L : 100MHz (CL=3)...
Features: ·Part Identification HSD16M64D8B-10 : 100MHz ( CL=2) HSD16M64D8B-10L : 100MHz ( CL=3) HS...
Features: • Part IdentificationHSD16M64D8H-10 : 100MHz (CL=2)HSD16M64D8H-10L : 100MHz (CL=3)...
PARAMETER | SYMBOL | RATING |
Voltage on Any Pin Relative to Vss | VIN ,OUT | -1V to 4.6V |
Voltage on Vcc Supply Relative to Vss | VCC | -1V to 4.6V |
Power Dissipation | PD | 8W |
Storage Temperature | TSTG | -55 to 150 |
Short Circuit Output Current | IOS | 200mA |
The HSD16M64B8A is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 4M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD16M64B8 is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows HSD16M64B8A to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.