HSD16M64B8A

Features: • Part IdentificationHSD16M64B8A-F/10L : 100MHz (CL=3)HSD16M64B8A-F/10 : 100MHz (CL=2)HSD16M64B8A-F/12 : 125MHz (CL=3)HSD16M64B8A-F/13 : 133MHz (CL=3)F means Auto & Self refresh with Low-Power (3.3V)• Burst mode operation• Auto & self refresh capability (4096 Cy...

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SeekIC No. : 004365988 Detail

HSD16M64B8A: Features: • Part IdentificationHSD16M64B8A-F/10L : 100MHz (CL=3)HSD16M64B8A-F/10 : 100MHz (CL=2)HSD16M64B8A-F/12 : 125MHz (CL=3)HSD16M64B8A-F/13 : 133MHz (CL=3)F means Auto & Self refresh ...

floor Price/Ceiling Price

Part Number:
HSD16M64B8A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Part Identification
HSD16M64B8A-F/10L : 100MHz (CL=3)
HSD16M64B8A-F/10 : 100MHz (CL=2)
HSD16M64B8A-F/12 : 125MHz (CL=3)
HSD16M64B8A-F/13 : 133MHz (CL=3)
F means Auto & Self refresh with Low-Power (3.3V)
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ±0.3V power supply
• MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• The used device is 4M x 8bit x 4Banks SDRAM





Specifications

PARAMETER SYMBOL RATING
Voltage on Any Pin Relative to Vss VIN ,OUT -1V to 4.6V
Voltage on Vcc Supply Relative to Vss VCC -1V to 4.6V
Power Dissipation PD 8W
Storage Temperature TSTG -55 to 150
Short Circuit Output Current IOS 200mA

Notes:
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.





Description

The HSD16M64B8A is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 4M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD16M64B8 is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows HSD16M64B8A to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.






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