Features: • Part IdentificationHSD16M32M4V-13/F13 :133MHz ( CL=3)HSD16M32M4V-12/F12: 125MHz (CL=3)HSD16M32M4V-10/F10: 100MHz (CL=2)HSD16M32M4V-10L/F10L: 100MHzHSD16M32M4V-66/F66: 66MHz (CL=2&3)F means Auto & Self refresh with Low-Power (3.3V)• Burst mode operation• Auto &...
HSD16M32M4V: Features: • Part IdentificationHSD16M32M4V-13/F13 :133MHz ( CL=3)HSD16M32M4V-12/F12: 125MHz (CL=3)HSD16M32M4V-10/F10: 100MHz (CL=2)HSD16M32M4V-10L/F10L: 100MHzHSD16M32M4V-66/F66: 66MHz (CL=2&a...
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DescriptionThe HSD128M72B9K is a 128M x 72 bit Synchronous Dynamic RAM high density memory module....
PARAMETER | SYMBOL | RATING |
Voltage on Any Pin Relative to Vss | VIN ,OUT | -1V to 4.6V |
Voltage on Vcc Supply Relative to Vss | Vcc | -1V to 4.6V |
Power Dissipation | PD | 4W |
Storage Temperature | TSTG | -55 to 150 |
Short Circuit Output Current | IOS | 50mA |
Notes :
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
The HSD16M32M4V is a 16M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 4M x 8 bit with 4banks Synchronous DRAMs in TSOP-II packages mounted on a 72-pin, FR-4-printed circuit board. Two 0.01uF decoupling capacitor is mounted on the printed circuit board in parallel for each SDRAM. The HSD16M32M4V is a SIMM designed. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.