DescriptionThe HSD1616-Y belongs to the HSD1616 series. It is a NPN epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for audio frequency power amplifier and medium speed switching applications. It is available in the TO-92 package. The following is the descri...
HSD1616-Y: DescriptionThe HSD1616-Y belongs to the HSD1616 series. It is a NPN epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for audio frequency power amplifier and med...
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DescriptionThe HSD128M72B9K is a 128M x 72 bit Synchronous Dynamic RAM high density memory module....
The HSD1616-Y belongs to the HSD1616 series. It is a NPN epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for audio frequency power amplifier and medium speed switching applications. It is available in the TO-92 package.
The following is the description about HSD1616-Y's absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 750 mW when TA is 25 ; (3): collector to base voltage(BVCBO) is 120 V and collector to emitter voltage(BVCEO) is 60 V,emitter to base voltage(VBEBO) is 6 V; (4): IC collector current(DC) is 1 A and IC collector current(pulse) is 2 A; (5): the minimum VBCBO is 120 V when IC 100 A; (7): the minimum BVCEO is 60 V when IC is 1 mA,and VBEBO is 6 V at IE is 10 A; (8): the maximum ICBO is 100 nA when VCB is 60 V and IEBO is 100 nA at VEB is 6 V; (9): the maximum VCE(sat) is 300 mV and the typical is 150 mV at the condition of IC is 1 A and IB is 50 mA; (10): the typical fT is 160 MHz and the minimum is 100 MHz at IC is 1 A and VCE is 2 V; (11): the typical value for the ts is 0.95 s and is 0.07 s for the tf and is 0.07 for the ton when VCE is 10 V and IC is 100 mA.
If you want to know more information about the HSD1616-Y,please download the datasheet at www.seekic.com.