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HSCH-9101

Features: • Gold Tri-Metal System For Improved Reliability• Low Capacitance• Low Series Resistance• High Cutoff Frequency• Polyimide Passivation• Multiple ConfigurationsSpecificationsPower Dissipation at TLEAD = 25°C ...........................75 mW per junction...

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SeekIC No. : 004365967 Detail

HSCH-9101: Features: • Gold Tri-Metal System For Improved Reliability• Low Capacitance• Low Series Resistance• High Cutoff Frequency• Polyimide Passivation• Multiple Configu...

HSCH-9101 Data Sheet

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Part Number:
HSCH-9101
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Gold Tri-Metal System For Improved Reliability
• Low Capacitance
• Low Series Resistance
• High Cutoff Frequency
• Polyimide Passivation
• Multiple Configurations


Specifications

Power Dissipation at TLEAD = 25°C ...........................75 mW per junction
Measured in an infinite heat sink derated linearly to zero at maximum rated temperature
Operating Temperature ................................................. -65°C to +150°C
Storage Temperature .................................................... -65°C to +150°C
Mounting Temperature .........................................   235°C for 10 seconds
Minimum Lead Strength .............................................................    6 grams


Description

The HSCH-9101 single, the HSCH-9201 series pair, and the HSCH-9251 anti-parallel pair are advanced gallium arsenide Schottky barrier diodes. These devices are fabricated utilizing molecular beam epitaxy (MBE) manufacturing techniques and feature rugged construction and consistent electrical performance. A polyimide coating provides scratch protection and resistance to contamination.




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