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HSCH-5300

Features: • Platinum Tri-Metal System High Temperature Stability• Silicon Nitride Passivation Stable, Reliable Performance• Low Noise Figure Guaranteed 7.5 dB at 26 GHz• High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics• Rugged Construction...

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SeekIC No. : 004365965 Detail

HSCH-5300: Features: • Platinum Tri-Metal System High Temperature Stability• Silicon Nitride Passivation Stable, Reliable Performance• Low Noise Figure Guaranteed 7.5 dB at 26 GHz• High...

HSCH-5300 Data Sheet

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Part Number:
HSCH-5300
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/16

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Product Details

Description



Features:

• Platinum Tri-Metal System High Temperature Stability
• Silicon Nitride Passivation Stable, Reliable Performance
• Low Noise Figure Guaranteed 7.5 dB at 26 GHz
• High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics
• Rugged Construction 4 Grams Minimum Lead Pull
• Low Capacitance 0.10 pF Max. at 0 V
• Polyimide Scratch Protection


Specifications

Pulse Power Incident at TA = 25°C .......................................................1 W
Pulse Width = 1 ms, Du = 0.001
CW Power Dissipation at TA = 25°C ............................................. 150 mW
Measured in an infinite heat sink derated linearly
to zero at maximum rated temperature
TOPR Operating Temperature Range ..........................-65°C to +175 °C
TSTG Storage Temperature Range ...............................-65°C to +200°C
Minimum Lead Strength ........................................ 4 grams pull on any lead
Diode Mounting Temperature ............................... +350°C for 10 sec. max.
These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode.


Description

HSCH-5300 are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial  techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.

The HSCH-5300 Agilent beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.




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