HSB772S-E

DescriptionThe HSB772S-E belongs to the HSB772S series. It is a PNP epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for using in output stage of 0.75W amplifier,voltage regulator,DC-DC converter and driver. It is available in the TO-92 package. The following...

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SeekIC No. : 004365927 Detail

HSB772S-E: DescriptionThe HSB772S-E belongs to the HSB772S series. It is a PNP epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for using in output stage of 0.75W amplifie...

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Part Number:
HSB772S-E
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/10

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Product Details

Description



Description

The HSB772S-E belongs to the HSB772S series. It is a PNP epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for using in output stage of 0.75W amplifier,voltage regulator,DC-DC converter and driver. It is available in the TO-92 package.

The following is the description about HSB772S-E's absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 750 mW when TA is 25 ; (3): collector to base voltage(BVCBO) is -40 V and collector to emitter voltage(BVCEO) is -30 V,emitter to base voltage(VBEBO) is -5 V; (4): IC collector current is -3 A; (5): the minimum VBCBO is -40 V when IC -100 A and IE is 0; (6): the minimum BVCEO is -30 V when IC is -1 mA and IB is 0,and VBEBO is -5 V at IE is -10 A and IC is 0; (7): the maximum ICBO is -1 A when VCB is -30 V and IEBO is -1 A at VEB is -3 V; (8): the maximum VCE(sat) is -0.5 V and the typical is -0.3 V at the condition of IC is -2 A and IB is -0.2 A; (9): the typical fT is 80 MHz at IC is -500 mA and VCE is -5 V,IC is -0.1 A and f is 100 MHz.

If you want to know more information about the HSB772S-E ,please download the datasheet at www.seekic.com.




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