HS-2100RH

Features:

• Electrically Screened to DESC SMD # 5962-99536
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
      - Maximum Total Dose . . . . . . . . . . . . . .3 x 105 RAD(SI)
      - DI RSG Process Provides Latch-up Immunity
      - Vertical Architecture Provides Low Dose Rate Immunity
• Bootstrap Supply Max Voltage to 120V
• Drives 1000pF Load at 1MHz with Rise and Fall Times of 45ns (Typ)
• 1A (Typ) Peak Output Current
• Independent Inputs for Non-Half Bridge Topologies
• Low DC Power Consumption . . . . . . . . . . . . . 60mW (Typ)
• Operates with VDD = VCC Over 12V to 20V Range
• Supply Undervoltage Protection


Application

• High Frequency Switch-Mode Power Supplies
• Drivers for Inductive Loads
• DC Motor Drivers


Pinout




Description

The Radiation Hardened HS-2100RH is a high frequency, 100V Half Bridge N-Channel MOSFET Driver IC, which is a functional, pin-to-pin replacement for the Intersil HIP2500 and the industry standard 2110 types. The low-side and high-side gate drivers are independently controlled. This gives the user maximum flexibility in dead-time selection and driver protocol.

In addition, the device HS-2100RH  has on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from SEUs.

Undervoltage on the high-side supply forces HO low. When that supply returns to a valid voltage, HO will go to the state of HIN. Undervoltage on the low-side supply forces both LO and HO low. When that supply becomes valid, LO returns to the LIN state and HO returns to the HIN state.