DescriptionThe HPN2907A is a PNP epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for general purpose amplifier and high speed medium-power switching applications and is available in the TO-92 package. There are some features about HPN2907A as follows. (1) lo...
HPN2907A: DescriptionThe HPN2907A is a PNP epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for general purpose amplifier and high speed medium-power switching applicatio...
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The HPN2907A is a PNP epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for general purpose amplifier and high speed medium-power switching applications and is available in the TO-92 package.
There are some features about HPN2907A as follows. (1) low collector saturation voltage; (2) high speed switching; (3) for complementary use with NPN type HPN2222A.
The following is the description about HPN2907A's absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 625 mW when TA is 25 ; (3): collector to base voltage(BVCBO) is -60 V and collector to emitter voltage(BVCEO) is -60 V,emitter to base voltage(VBEBO) is -5 V; (4): IC collector current is -600 mA; (5): the minimum VBCBO is -60 V when IC -10 A and IE is 0 ; (6): the minimum BVCEO is -60 V when IC is -10 mA and IB is 0,and VBEBO is -5 V at IE is -10 A and IC is 0; (7): the maximum ICBO is -10 nA when VCB is -50 V and IC is 0,ICEX is -50 nA at VCE is -30 V and VBE is -0.5 V; (8): the maximum VCE(sat) is -0.4 V and the typical is -0.2 V at the condition of IC is -150 mA and IB is -15 mA; (9): the minimum fT is 200 MHz at IC is -50 mA,VCE is -20 V and f is 100 MHz.
If you want to know more information about the HPN2907A,please download the datasheet at www.seekic.com.