HPLR3103

Features: • Logic Level Gate Drive• 52A†, 30V• Low On-Resistance, rDS(ON) = 0.019W• UIS Rating Curve• Related Literature- TB334, Guidelines for Soldering Surface Mount Components to PC Boards PinoutSpecifications HPLR3103 HPLU3103 UNITS Dr...

product image

HPLR3103 Picture
SeekIC No. : 004365333 Detail

HPLR3103: Features: • Logic Level Gate Drive• 52A†, 30V• Low On-Resistance, rDS(ON) = 0.019W• UIS Rating Curve• Related Literature- TB334, Guidelines for Soldering Surface...

floor Price/Ceiling Price

Part Number:
HPLR3103
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Logic Level Gate Drive
• 52A†, 30V
• Low On-Resistance, rDS(ON) = 0.019W
• UIS Rating Curve
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"



Pinout

  Connection Diagram


Specifications

 
HPLR3103
HPLU3103
UNITS
Drain to Source Voltage (Note 1)
VDSS
30
V
Drain to Gate Voltage (RGS = 20kW) (Note 1)
VDGR
30
V
Gate to Source Voltage
VGS
±16V
V
Continuous Drain Current
ID
52
A
Pulsed Drain Current (Note 2)
IDM
390
A
Single Pulse Avalanche Energy (Note 4)
EAS
240
mj
Power Dissipation
PD
89
W
Derate Above 25
0.71
W/
Operating and Storage Temperature
TJ, TSTG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
TL
300
Package Body for 10s, See Techbrief 334
Tpkg
260



Description

HPLR3103 are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optoelectronics
LED Products
Audio Products
Sensors, Transducers
Semiconductor Modules
Power Supplies - External/Internal (Off-Board)
View more