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HN58V257

Features: • Single 3 V supply• On-chip latches: address, data, CE , OE , WE • Automatic byte write: 15 ms max• Automatic page write (64 bytes): 15 ms max• Fast access time: 350 ns max• Low power dissipation: 20 mW/MHz typ (active) 110 W max (standby)• Data...

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SeekIC No. : 004365043 Detail

HN58V257: Features: • Single 3 V supply• On-chip latches: address, data, CE , OE , WE • Automatic byte write: 15 ms max• Automatic page write (64 bytes): 15 ms max• Fast access t...

HN58V257 Data Sheet

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Part Number:
HN58V257
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Single 3 V supply
• On-chip latches: address, data, CE , OE , WE
• Automatic byte write: 15 ms max
• Automatic page write (64 bytes): 15 ms max
• Fast access time: 350 ns max
• Low power dissipation:
   20 mW/MHz typ (active)
   110 W max (standby)
• Data polling, RDY/Busy
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 105 erase/write cycles (in page mode)
• 10 years data retention
• Write protection by RAS pin


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Supply voltage *1
VCC
0.6 to +7.0
V
Input voltage *1
VIN
0.5*2 to +7.0
V
Operating temperature range*3
Topr
0 to +70
°C
Storage temperature range
Tstg
55 to +125
°C
Notes:
1.With respect to VSS
2.Vin min = 2.5 V for pulse width 50 ns.
3. Including electrical characteristics and data retention



Description

The Hitachi HN58V257 is a electically erasable and programmable ROM organized as 32768-word ×8-bit. It realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 64-byte page programming function to make its erase and write operations faster.




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