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HN58V1001

Features: ` Single 3 V supply: 2.7 V to 5.5 V` Access time: 250 ns (max)` Power dissipation - Active: 20 mW/MHz, (typ) - Standby: 110 W (max)` On-chip latches: address, data, CE, OE, WE` Automatic byte write: 15 ms (max)` Automatic page write (128 bytes): 15 ms (max)` Data polling and RDY/Busy` Da...

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SeekIC No. : 004365040 Detail

HN58V1001: Features: ` Single 3 V supply: 2.7 V to 5.5 V` Access time: 250 ns (max)` Power dissipation - Active: 20 mW/MHz, (typ) - Standby: 110 W (max)` On-chip latches: address, data, CE, OE, WE` Automatic b...

HN58V1001 Data Sheet

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Part Number:
HN58V1001
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

`  Single 3 V supply: 2.7 V to 5.5 V
`  Access time: 250 ns (max)
`  Power dissipation
    -  Active: 20 mW/MHz, (typ)
    -  Standby: 110 W (max)
`  On-chip latches: address, data, CE, OE, WE
`  Automatic byte write: 15 ms (max)
`  Automatic page write (128 bytes): 15 ms (max)
`  Data polling and RDY/Busy
`  Data protection circuit on power on/off
`  Conforms to JEDEC byte-wide standard
`  Reliable CMOS with MNOS cell technology
`  104 erase/write cycles (in page mode)
`  10 years data retention
`  Software data protection
`  Write protection by RES pin


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
VCC
0.6 to +7.0
V
Input voltage relative to VSS
Vin
0.5*1 to +7.0
V
Operating temperature range*2
Topr
0 to +70
Storage temperature range
Tstg
55 to +125



Description

The Hitachi HN58V1001 is a electrically erasable and programmable ROM organized as 131072-word ´ 8- bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the write operations faster.




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