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HN4K03JU

Application·High input impedance·Low gate threshold voltage: Vth = 0.5~1.5V·Excellent switching times·Small packageSpecifications Characteristic Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V DC Drain current ID 100 ...

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SeekIC No. : 004365029 Detail

HN4K03JU: Application·High input impedance·Low gate threshold voltage: Vth = 0.5~1.5V·Excellent switching times·Small packageSpecifications Characteristic Symbol Rating Unit Drain-source volt...

HN4K03JU Data Sheet

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Part Number:
HN4K03JU
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Application

·High input impedance
·Low gate threshold voltage: Vth = 0.5~1.5V
·Excellent switching times
·Small package


Specifications

Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGSS
10
V
DC Drain current
ID
100
mA
Drain power dissipation
PD*
200
mW
Channel temperature
Tch
150
Storage temperature range
Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

*: Total rating


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