HN4D01JU

Application

·Low forward voltage : V_{F (3)} = 0.92V (typ.)
·Fast reverse recovery time : t_rr = 1.6ns (typ.)
·Small total capacitance : C_T = 2.2pF (typ.)


Specifications

Characteristic	Symbol	Rating	Unit
Maximum (peak) reverse voltage	VRM	85	V
Reverse voltage	VR	80	V
Maximum (peak) forward current	IFM	300*	mA
Average forward current	IO	100*	mA
Surge current (10ms)	IFSM	2*	A
Power dissipation	P	200**	mW
Junction temperature	Tj	150
Storage temperature	Tstg	−55~150

Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling
Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and  timated failure rate, etc).

*: Unit rating. Total rating = unit rating * 1.5
**: Unit rating. Tota