Position: Home  > All Categories> Integrated Circuits (ICs) > HN4B101J

HN4B101J

Application·Small footprint due to a small and thin package ·High DC current gain : hFE= 200 to 500 (IC = 0.12 A)·Low collector-emitter saturation: PNP VCE(sat)= 0.20 V (max) : NPN VCE (sat) = 0.17 V (max)·High-speed switching : PNP tf= 45 ns (typ.) : NPN tf= 50 ns (typ.) PinoutSpecifications ...

product image

HN4B101J Picture
See larger image
SeekIC No. : 004365025 Detail

HN4B101J: Application·Small footprint due to a small and thin package ·High DC current gain : hFE= 200 to 500 (IC = 0.12 A)·Low collector-emitter saturation: PNP VCE(sat)= 0.20 V (max) : NPN VCE (sat) = 0.17...

HN4B101J Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
HN4B101J
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/17

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Application

·Small footprint due to a small and thin package 
·High DC current gain : hFE = 200 to 500 (IC = 0.12 A) 
·Low collector-emitter saturation: PNP  VCE(sat) = 0.20 V (max)
                                                  : NPN  VCE (sat) = 0.17 V (max) 
·High-speed switching : PNP  tf = 45 ns (typ.)
                                    : NPN  tf = 50 ns (typ.)




Pinout

Connection Diagram


Specifications

Characteristic
Symbol
Rating
Unit
PNP NPN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCES
VEBO
 -30
-30
-7
50
30
7
V
V
V
Collector current
DC (Note1)
IC
-1.0
1.2
A
Pulse (Note1)
ICP
-5.0
5.0
Base current
IB
-120
120
A
Collector power
dissipation (t=10s)
Single-device
operation
PC(Note2)
0.85
W
Collector power
dissipation (DC)
Single-device
operation
PC(Note2)

0.55
W
Junction temperature
Storage temperature range
Tj
Tstg
150
-55 to 150


Note 1: Ensure that the channel temperature does not exceed 150!aC during use of the device.
Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) anindividual reliability data (i.e. reliability test report and estimated failure rate, etc).




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cable Assemblies
CS1W-CN114
XW2Z-500T
Circuit Protection
A50QS75-4Y
F-17*77
Prototyping Products
AVT4168
DE1
Discrete Semiconductor Products
T508N12TOF
MUR20040
Audio Products
HUC1002
WM-64CT
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
View more