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HN2A01FU

Application·􀁺 Small package (dual type)·􀁺 High voltage and high current : VCEO = −50V, IC = −150mA (max)·􀁺 High hFE : hFE = 120~400·􀁺 Excellent hFE linearity : hFE (IC = −0.1mA) / (IC = −2mA) = 0.95 (typ.)Specifications SYMBOL PARAM...

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HN2A01FU: Application·􀁺 Small package (dual type)·􀁺 High voltage and high current : VCEO = −50V, IC = −150mA (max)·􀁺 High hFE : hFE = 120~400·􀁺 Excellent hFE li...

HN2A01FU Data Sheet

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Part Number:
HN2A01FU
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Application

·􀁺 Small package (dual type)
·􀁺 High voltage and high current : VCEO = −50V, IC = −150mA (max)
·􀁺 High hFE : hFE = 120~400
·􀁺 Excellent hFE linearity : hFE (IC = −0.1mA) / (IC = −2mA)
        = 0.95 (typ.)


Specifications

SYMBOL PARAMETER RATING UNIT
VCBO Collector-base voltage -50 V
VCEO Collector-emitter voltage −50 V
VEBO Emitter-base voltage −5 V
IC Collector Current 150 mA
IB Base current -30 mA

PC

 Collector power dissipation 200 mW
TJ Junction temperature 125
Tstg Storage temperature −55~125


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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