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HN29V51211T-50H

Features: ` On-board single power supply (VCC): VCC = 2.7 V to 3.6 V` Organization -AND Flash Memory: (2048 + 64) bytes* (More than 32,113 sectors) - Data register: (2048 + 64) bytes` Multi-level memory cell - 2 bit/per memory cell` Automatic programming - Sector program time: 1.0 ms (typ) - Syste...

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SeekIC No. : 004364991 Detail

HN29V51211T-50H: Features: ` On-board single power supply (VCC): VCC = 2.7 V to 3.6 V` Organization -AND Flash Memory: (2048 + 64) bytes* (More than 32,113 sectors) - Data register: (2048 + 64) bytes` Multi-level me...

HN29V51211T-50H Data Sheet

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Part Number:
HN29V51211T-50H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Features:

`  On-board single power supply (VCC): VCC = 2.7 V to 3.6 V
`  Organization
  -AND Flash Memory: (2048 + 64) bytes * (More than 32,113 sectors)
  - Data register: (2048 + 64) bytes
`  Multi-level memory cell
  - 2 bit/per memory cell
`  Automatic programming
  - Sector program time: 1.0 ms (typ)
  - System bus free
  - Address, data latch function
  - Internal automatic program verify function
  - Status data polling function
`  Automatic erase
  - Single sector erase time: 1.0 ms (typ)
  - System bus free
  - Internal automatic erase verify function
  - Status data polling function
`  Erase mode
  - Single sector erase ((2048 + 64) byte unit)
`  Fast serial read access time:
  - First access time: 50 s (max)
  - Serial access time: 50 ns (max)
`  Low power dissipation:
  - ICC1 = 2 mA (typ) (Read)
  - ICC2 = 20 mA (max) (Read)
  - ISB2 = 50 A (max) (Standby)
  - ICC3/ICC4 = 40 mA (max) (Erase/Program)
  - ISB3 = 20 A (max) (Deep standby)
`  The following architecture is required for data reliability.
  - Error correction: more than 3-bit error correction per each sector read
  - Spare sectors: 1.8% (579 sectors) (min) within usable sectors


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit Notes
VCC voltage VCC 0.6 to +4.6 V 1
VSS voltage VSS 0 V
All input and output voltages Vin, Vout 0.6 to +4.6 V 1, 2
Operating temperature range Topr 0 to +70 °C
Storage temperature range Tstg 65 to +125 °C 3
Storage temperature under bias Tbias 10 to +80 °C
Notes: 1. Relative to VSS.
2. Vin, Vout = 2.0 V for pulse width 20 ns.
3. Device storage temperature range before programming.


Description

The Hitachi HN29V51211T-50H is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29V51211T-50H are more than 32,113 (98% of all sector address) and less than 32,768 sectors.




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