Features: • On-board power supply (VCC/VPP) VCC = 5 V ± 10% VPP = VSS to VCC (Read) VPP = 12.0 V ± 0.6 V (Erase/Program)• Fast access time 120 ns/150 ns/200 ns (max)• Programming function Byte programming Programming time: 25 s typ/byte Address, data, control latch function•...
HN28F101: Features: • On-board power supply (VCC/VPP) VCC = 5 V ± 10% VPP = VSS to VCC (Read) VPP = 12.0 V ± 0.6 V (Erase/Program)• Fast access time 120 ns/150 ns/200 ns (max)• Programming f...
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Parameter |
Symbol |
Value |
Unit |
All input and output voltage*1 | Vin, Vout |
0.6*2 to +7.0 |
V |
VCC voltage*1 | VCC |
0.6 to +14.0 |
V |
VSS voltage*1 | VSS |
0.6 to +7.0 |
V |
Operating temperature range | Topr |
0 to +70 |
|
Storage temperature range | Tstg |
55 to +125 |
|
Storage temperature under bias | Tbias |
10 to +80 |
The Hitachi HN28F101 is a 131072-word x 8-bit CMOS flash Memory, realizing on-board programming. It programs or erases data with only on-board power supply (12 V VPP supply/5 V VCC supply). It programs data with fast programming algorithm by command inputs. It has two types of erase algorithm : automatic erase and fast erase by command inputs. Automatic erase function can erase data automatically without external control only by inputting trigger pulse and inform erase completion to CPU by status polling. The HN28F101 can control programming erase algorithm externally.