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HN1V02H

Features: • High capacitance ratio: C1 V/C8 V = 19.5 (typ.)• High Q: Q = 200 (min)• Including two devices in FM8 package (flat pack mini 8 pin)• Low voltage operation: VR = 1~8 VPinoutSpecifications Characteristics Symbol Rating Unit Reverse voltage ...

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SeekIC No. : 004364950 Detail

HN1V02H: Features: • High capacitance ratio: C1 V/C8 V = 19.5 (typ.)• High Q: Q = 200 (min)• Including two devices in FM8 package (flat pack mini 8 pin)• Low voltage operation: VR = 1...

HN1V02H Data Sheet

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Part Number:
HN1V02H
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High capacitance ratio: C1 V/C8 V = 19.5 (typ.)
• High Q: Q = 200 (min)
• Including two devices in FM8 package (flat pack mini 8 pin)
• Low voltage operation: VR = 1~8 V


Pinout

Connection Diagram


Specifications

Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
16
V
Junction temperature
Tj
125
Storage temperature range
Tstg
−55~125


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("HandlingPrecautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and timated failure rate,etc).




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