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HN1K03FU

Features: `Hign input impedance`Low gate threshold voltage : Vth = 0.5V~1.5V`Excellent switching times : ton = 0.16s (typ.) toff= 0.15s (typ.)`Small package`Enhancement-modeSpecifications Characteristic Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ...

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HN1K03FU: Features: `Hign input impedance`Low gate threshold voltage : Vth = 0.5V~1.5V`Excellent switching times : ton = 0.16s (typ.) toff= 0.15s (typ.)`Small package`Enhancement-modeSpecifications Cha...

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Part Number:
HN1K03FU
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

`Hign input impedance
`Low gate threshold voltage : Vth = 0.5V~1.5V
`Excellent switching times : ton = 0.16s (typ.) toff= 0.15s (typ.)
`Small package
`Enhancement-mode


Specifications

Characteristic Symbol Rating Unit
Drain-Source voltage VDS 20 V
Gate-Source voltage VGSS 10 V
DC Drain current ID 100 mA
Drain power dissipation PD* 200 mW
Channel temperature Tch 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly evenif the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximumratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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