HMS1M32M8S

`Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.This is a stress rating only and functional operation of the device at these or any other conditions above those icated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for xtended periods may affect reliability.

The HMS1M32M8S is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, doublesided,
FR4-printed circuit board.

The HMS1M32M8S also support low data retention voltage for battery back-up operations with low data retention current. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2,/CE_LL2) are used to enable the module's 4 bytes independently. Output enable (/OE) and write enable(/WE) can
set the memory input and output.

Data is written into the SRAM memory HMS1M32M8S when write enable (/WE) and chip enable (/CE) inputs are both LOW.Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.

For reliability, this SRAM module HMS1M32M8S is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible